12 GHz $F_{rm MAX}$ GaN/AlN/AlGaN Nanowire MISFET

GaN/AlN/AlGaN/GaN nanowire metal–insulator–semiconductor field-effect transistors (MISFETs) have been fabricated for the first time with submicrometer gate lengths. Their microwave performances were investigated. An intrinsic current-gain cutoff frequency $(F_{T})$ of 5 GHz as well as an intrinsic maximum available gain $(F_{rm MAX})$ cutoff frequency of 12 GHz have been obtained for the first time and associated with a gate length of 0.5 $muhbox{m}$. These results show the great potentiality of GaN-based nanowire FETs for microwave applications.