| AlGaN/GaN HEMT多偏置下CV特性的研究 |
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| 引用本文： | 蒲颜,王亮,袁婷婷,欧阳思华,刘果果,罗卫军,刘新宇. AlGaN/GaN HEMT多偏置下CV特性的研究[J]. 半导体学报, 2010, 31(10): 104002-4 |
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| 作者姓名： | 蒲颜 王亮 袁婷婷 欧阳思华 刘果果 罗卫军 刘新宇 |
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| 基金项目： | 国家重点基础研究规划项目和国家自然科学基金项目 |
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| 摘 要： | 电容电压特性是分析半导体器件性能的一个有效手段，而且是GaN HEMT器件大信号模型建模的重要步骤之一。本文提出一种多偏置电容电压的测试方法，并讨论了Cgs和Cgd的物理意义及其随偏置电压Vgs和Vds的变化规律。提出一种能够反映Cgs和Cgd特性的电容模型，与测试电容数据有很好的拟合效果，并且用器件的功率特性验证了该电容模型在非线性仿真的准确性。
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| 关 键 词： | AlGaN 偏置条件 电压特性 HEMT 电容式 电容模型 测量方法 物理意义 |
| 收稿时间： | 2010-04-29 |
| 修稿时间： | 2010-04-29 |
Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT |
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| Pu Yan,Wang Liang,Yuan Tingting,Ouyang Sihu,Liu Guoguo,Luo Weijun and Liu Xinyu. Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT[J]. Chinese Journal of Semiconductors, 2010, 31(10): 104002-4 |
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| Authors: | Pu Yan Wang Liang Yuan Tingting Ouyang Sihu Liu Guoguo Luo Weijun Liu Xinyu |
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| Affiliation: | Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate--source and gate--drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate--source and gate--drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model. |
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| Keywords: | AlGaN/GaN HEMT multi-bias CV curves non-linear CV model |
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