首页 | 本学科首页   官方微博 | 高级检索  
     

一种适应于flash memory的超低压和高速的感应放大器设计
引用本文:郭家荣,冉峰. 一种适应于flash memory的超低压和高速的感应放大器设计[J]. 半导体学报, 2011, 32(12): 125003-5
作者姓名:郭家荣  冉峰
摘    要:A new low-voltage and high-speed sense amplifier is presented, based on a very simple direct current-mode comparison. It adopts low-voltage reference current extraction and a dynamic output method to realize its performance indicators such as low voltage, low power and high precision. The proposed amplifier can sense a 0.5 μ A current gap and work with a lowest voltage of 1 V. In addition, the current power of a single amplifier is optimized by 15%.

关 键 词:flash memory   感应放大器;电流模式;低电压
收稿时间:2011-03-16
修稿时间:2011-09-02

A new low-voltage and high-speed sense amplifier for flash memory
Guo Jiarong and Ran Feng. A new low-voltage and high-speed sense amplifier for flash memory[J]. Chinese Journal of Semiconductors, 2011, 32(12): 125003-5
Authors:Guo Jiarong and Ran Feng
Affiliation:Microelectronic R&D Center, Shanghai University, Shanghai 200444, China;Microelectronic R&D Center, Shanghai University, Shanghai 200444, China
Abstract:
Keywords:flash memory  sense amplifier  current-mode  low-voltage
点击此处可从《半导体学报》浏览原始摘要信息
点击此处可从《半导体学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号