| 脉冲Nd:YAG激光器选区晶化制备多晶硅薄膜 |
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| 引用本文： | 段春艳,刘超,艾斌,赖键钧,邓幼俊,沈辉.脉冲Nd:YAG激光器选区晶化制备多晶硅薄膜[J].半导体学报,2011,32(12):123002-5. |
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| 作者姓名： | 段春艳 刘超 艾斌 赖键钧 邓幼俊 沈辉 |
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| 作者单位： | 中山大学,中山大学,中山大学,中山大学,中山大学,中山大学 |
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| 基金项目： | Project supported by the National Natural Science Foundation of China （Nos. 50802118, 60906005） and the Natural Science Foundation of Guangdong Province, China （N o. 9451027501002848）. The authors would like to thank Mr. Zeng Xueran （State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University） for his assistance with the operation of the laser system. |
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| 摘 要： | 采用三倍频后的Nd:YAG固体脉冲激光系统(波长为355 nm)选区诱导晶化非晶硅薄膜,以制备多晶硅薄膜。分别测试了激光晶化前后薄膜的表面形貌和拉曼光谱。在文中分析了400 nm厚薄膜在激光扫描前后的表面形貌变化。拉曼光谱显示薄膜的晶化程度随着激光能量的增加而提高。最优的激光晶化能量密度与薄膜的厚度相关。对于300 nm和400 nm厚的非晶硅薄膜,有效晶化非晶硅的能量密度分别在440-634 mJ/cm2,777-993 mJ/cm2之间。在激光能量密度分别为634 mJ/cm2,975 mJ/cm2和1571 mJ/cm2时,300 nm、400 nm和500 nm厚薄膜达到最好的晶化效果。
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| 关 键 词： | 脉冲Nd：YAG激光 多晶硅薄膜 激光波长 纳米 结晶 激光能量密度 面积 三次谐波产生 |
| 收稿时间： | 6/7/2011 3:06:29 PM |
| 修稿时间： | 8/11/2011 3:57:00 PM |
Selected area laser-crystallized polycrystalline silicon thin films by a pulsed Nd:YAG laser with 355 nm wavelength |
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| Duan Chunyan,Liu Chao,Ai Bin,Lai Jianjun,Deng Youjun and Shen Hui.Selected area laser-crystallized polycrystalline silicon thin films by a pulsed Nd:YAG laser with 355 nm wavelength[J].Chinese Journal of Semiconductors,2011,32(12):123002-5. |
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| Authors: | Duan Chunyan Liu Chao Ai Bin Lai Jianjun Deng Youjun and Shen Hui |
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| Affiliation: | State Key Laboratory of Optoelectronic Materials and Technologies, Institute for Solar Energy Systems, Sun Yat-sen University, Guangzhou 510275, China;State Key Laboratory of Optoelectronic Materials and Technologies, Institute for Solar Energy Systems, Sun Yat-sen University, Guangzhou 510275, China;State Key Laboratory of Optoelectronic Materials and Technologies, Institute for Solar Energy Systems, Sun Yat-sen University, Guangzhou 510275, China;State Key Laboratory of Optoelectronic Materials and Technologies, Institute for Solar Energy Systems, Sun Yat-sen University, Guangzhou 510275, China;State Key Laboratory of Optoelectronic Materials and Technologies, Institute for Solar Energy Systems, Sun Yat-sen University, Guangzhou 510275, China;State Key Laboratory of Optoelectronic Materials and Technologies, Institute for Solar Energy Systems, Sun Yat-sen University, Guangzhou 510275, China |
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| Abstract: | Selected area laser-crystallized polycrystalline silicon (p-Si) thin films were prepared by the third harmonics (355 nm wavelength) generated by a solid-state pulsed Nd:YAG laser. Surface morphologies of 400 nm thick films after laser irradiation were analyzed. Raman spectra show that film crystallinity is improved with increase of laser energy. The optimum laser energy density is sensitive to the film thickness. The laser energy density for efficiently crystallizing amorphous silicon films is between 440-634 mJ/cm2 for 300 nm thick films and between 777-993 mJ/cm2 for 400 nm thick films. The optimized laser energy density is 634, 975 and 1571 mJ/cm2 for 300, 400 and 500 nm thick films, respectively. |
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| Keywords: | polycrystalline silicon thin films Nd:YAG laser laser crystallization |
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