MOS Capacitance-Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities |
| |
Authors: | Jie Binbin and Sah Chihtang |
| |
Affiliation: | Department of Physics, Xiamen University, Xiamen 361005, China;CTSAH Associates, Gainesville, Florida 32605, USA;Department of Physics, Xiamen University, Xiamen 361005, China;CTSAH Associates, Gainesville, Florida 32605, USA |
| |
Abstract: | Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier, or one-energy-level impurity species. Models described include a donor electron trap and an acceptor hole trap, both donors, both acceptors, both shallow energy levels, both deep, one shallow and one deep, and the identical donor and acceptor. Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications. |
| |
Keywords: | MOS silicon trapping capacitance dopant impurities donors acceptors |
本文献已被 维普 等数据库收录! |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|