Self-aligned aluminum top-gate polysilicon thin-film transistorsfabricated using laser recrystallization and gas-immersion laser doping |
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Authors: | Giust GK Sigmon TW |
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Affiliation: | Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ; |
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Abstract: | We present electrical results from polysilicon thin film transistors (TFT's) fabricated using laser-recrystallized channels and gas-immersion laser-doped source-drain regions. A simple, four-level self-aligned aluminum top-gate process is developed to demonstrate the effectiveness of these laser processes in producing TFT's. The source-drain doping process results in source-drain sheet resistances well below 100 Ω/□. TFT field-effect mobilities in excess of 200 cm2/Vs are measured for the laser-fabricated unhydrogenated TFT's |
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