High-frequency differential piezoelectric photoacoustic investigation of ion-implanted (100) silicon wafers via laser beam position modulation

An exploratory application of position-modulation photoacoustic imaging of ion-implanted (100)-oriented Si wafers was undertaken to assess its potential as a diagnostic probe in semiconductor processing. Wafer scans were performed using acoustooptic modulation of a 1.06-mum Nd(3+):YAG laser beam up to 0.2 MHz with piezoelectric photoacoustic detection. Sensitivity ranges to ion-implanted parameters (ionic species and fluences) were studied and the capability of the technique to monitor processing-induced damage was established. Results indicate that position-modulated photoacoustic detection offers higher sensitivity than single-beam photothermal imaging and has distinct advantages over other analytical techniques.