Modeling and measurement approaches for electrostatic discharge in semiconductor devices and ICs: an overview |
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Authors: | J. C. Lee G. D. Croft J. J. Liou W. R. Young J. Bernier |
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Affiliation: | a Electrical and Computer Engineering Department, University of Central Florida, Orlando, FL, USA;b Technology Development Department, Harris Semiconductor, Melbourne, FL, USA;c Reliability Engineering, Harris Semiconductor, Melbourne, FL, USA |
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Abstract: | Electrostatic charges can be generated everywhere. When they are discharged through semiconductor devices and integrated circuits, an event called an electrostatic discharge (ESD), failure of electronics systems using these devices and ICs can occur. This paper first gives an overview of the ESD sources and models. Then the emphasis is placed on the modeling and measurements of the most commonly used of these models called the human body model (HBM). Various HBM protection circuits are examined to look at ways of preventing ICs from being damaged should ESD events occur. The issue of HBM measurements is also addressed so that the rapid transient associated with this ESD model can be accurately measured and characterized. |
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