Very low threshold current density room temperature continuous-wavelasing from a single-layer InAs quantum-dot laser |
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Authors: | Xiaodong Huang Stintz A Hains CP Liu GT Cheng J Malloy KJ |
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Affiliation: | Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM; |
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Abstract: | Continuous-wave (CW) lasing operation with a very low threshold current density (Jth=32.5 A/cm2) has been achieved at room temperature by a ridge waveguide quantum-dot (QD) laser containing a single InAs QD layer embedded within a strained InGaAs quantum well (dot-in-well, or DWELL structure). Lasing proceeds via the QD ground state with an emission wavelength of 1.25 μm when the cavity length is longer than 4.2 mm. For a 5-mm long QD laser, CW lasing has been achieved at temperatures as high as 40°C, with a characteristic temperature T0 of 41 K near room temperature. Lasers with a 20 μm stripe width have a differential slope efficiency of 32% and peak output power of >10 mW per facet (uncoated) |
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