| 基于ICP的硅高深宽比沟槽刻蚀技术 |
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| 引用本文： | 展明浩,宋同晶,皇华,王文婧,陈博.基于ICP的硅高深宽比沟槽刻蚀技术[J].电子科技,2012,25(8):77-79. |
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| 作者姓名： | 展明浩 宋同晶 皇华 王文婧 陈博 |
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| 作者单位： | (1.合肥工业大学 电子科学与应用物理学院,安徽 合肥 230009;2.中国兵器工业第214所 工艺1部,安徽 蚌埠 233042) |
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| 摘 要： | 介绍了电感耦合等离子体(ICP)刻蚀技术的基本概念。结合英国STS公司的STS multiplex ICP system刻蚀机,介绍了刻蚀机原理及刻蚀过程。对硅深槽刻蚀技术进行了分析,对其中Footing效应、Lag效应和侧壁光滑问题提出了优化方案,最后在实验的基础上得出了能够刻蚀出高质量硅深沟槽的刻蚀参数。
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| 关 键 词： | ICP刻蚀 Footing效应 Lag效应 侧壁光滑度 高深宽比 |
Study of High Aspect Ratio Silicon Trench Etching Based on ICP |
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| ZHAN Minghao,SONG Tongjing,HUANG Hua,WANG Wenjing,CHEN Bo.Study of High Aspect Ratio Silicon Trench Etching Based on ICP[J].Electronic Science and Technology,2012,25(8):77-79. |
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| Authors: | ZHAN Minghao SONG Tongjing HUANG Hua WANG Wenjing CHEN Bo |
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| Affiliation: | (1.School of Electronic Science and Applied Physics,Hefei University of Technology,Hefei 230009,China;
2.First Department of Techniques,No.214 Institute of Chinese Ordnance Industry,Bengbu 233042,China) |
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| Abstract: | This paper introduces the basic concepts of the inductively coupled plasma(ICP) etching technique.On the basis of the STS multiplex ICP system etching machine,it describes the principle of the etching machine and the etching process.The silicon deep trench etching technology is analyzed.An optimization scheme is presented for such problems as footing effect,lag effect and sidewalls roughness.With lots of experiments,we have obtained the etching conditions for etching high aspect ratio silicon deep trench. |
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| Keywords: | ICP etching Footing effect Lag effect sidewall roughness high aspect ratio |
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