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| 一种低温漂、高精度CMOS带隙基准源设计 | |
| 引用本文： | 王宇星,曹校军,姜盛瑜,吴金. 一种低温漂、高精度CMOS带隙基准源设计[J]. 电子科技, 2012, 25(8): 6-9 |
| 作者姓名： | 王宇星 曹校军 姜盛瑜 吴金 |
| 作者单位： | (1.无锡科技职业学院 尚德光伏学院,江苏 无锡 214028;2.海力士半导体中国有限公司 制造技术部,江苏 无锡 214028;3.东南大学 无锡分校,江苏 无锡 214135) |
| 摘 要： | 基于线性分段补偿的基本原理,依据输出支路内部的温度负反馈结构,提出了一种结构简单、适应不同开口方向的高阶补偿方法。并设计了一种基于电流镜结构的低温漂、高精度的电压基准电路。CSMC 0.35 μm CMOS工艺的仿真结果表明,经高阶补偿的电压模基准,在-40~125 ℃温区范围内温度系数为2.84×10-6/℃,低频100 Hz时的PSRR达到-70.6 dB,10 kHz为-63.36 dB。当电源电压在2~3 V范围内变化时,其电压值波动为3 mV/V。整个带隙基准电压源具有较好的综合性能。 |
| 关 键 词： | CMOS带隙基准源 低压 曲率补偿 温度系数 |
Design of a Low Temperature Float High Precision CMOS Bandgap Reference |
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| WANG Yuxing,CAO Xiaojun,JIANG Shengyu,WU Jin. Design of a Low Temperature Float High Precision CMOS Bandgap Reference[J]. Electronic Science and Technology, 2012, 25(8): 6-9 | |
| Authors: | WANG Yuxing CAO Xiaojun JIANG Shengyu WU Jin |
| Affiliation: | (1.Suntech V College,Wuxi College of Science and Technology,Wuxi 214028,China; 2.Manufacturing Technology Division,Hynix Semiconductor China Ltd,Wuxi 214028,China; 3.Wuxi Campus,Southeast University,Wuxi 214135,China) |
| Abstract: | Based on the basic principles of linear segmented compensation and the output branch structure of the internal temperature of negative feedback,this paper proposes a novel structure which is simple and adapts to high order compensation methods of different opening directions.It also designs a low temperature float high precision voltage reference circuit based on the current mirror structure.Simulation by the CSMC 0.35 μm CMOS process indicates this bandgap reference can reach a temperature coefficient of 2.84 ℃ from-40 to125 ℃.PSRR can reach-70.6 dB and-63.36 dB at 100 Hz and 10 kHz PSRR,respectively.When the power supply voltage is in the range 2~3 V,the voltage fluctuation value is 3 mV/V.The proposed BGR has good overall performance. |
| Keywords: | CMOS bandgap reference low voltage curvature compensation temperature coefficient |
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