首页 | 本学科首页   官方微博 | 高级检索  
     


Epitaxial growth of InP nanowires on germanium
Authors:Bakkers Erik P A M  van Dam Jorden A  De Franceschi Silvano  Kouwenhoven Leo P  Kaiser Monja  Verheijen Marcel  Wondergem Harry  van der Sluis Paul
Affiliation:Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The Netherlands. erik.bakkers@philips.com
Abstract:The growth of III-V semiconductors on silicon would allow the integration of their superior (opto-)electronic properties with silicon technology. But fundamental issues such as lattice and thermal expansion mismatch and the formation of antiphase domains have prevented the epitaxial integration of III-V with group IV semiconductors. Here we demonstrate the principle of epitaxial growth of III-V nanowires on a group IV substrate. We have grown InP nanowires on germanium substrates by a vapour-liquid-solid method. Although the crystal lattice mismatch is large (3.7%), the as-grown wires are monocrystalline and virtually free of dislocations. X-ray diffraction unambiguously demonstrates the heteroepitaxial growth of the nanowires. In addition, we show that a low-resistance electrical contact can be obtained between the wires and the substrate.
Keywords:
本文献已被 PubMed 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号