Low-temperature polysilicon thin-film transistor driving withintegrated driver for high-resolution light emitting polymerdisplay |
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| Authors: | Kimura M Yudasaka I Kanbe S Kobayashi H Kiguchi H Seki S Miyashita S Shimoda T Ozawa T Kitawada K Nakazawa T Miyazawa W Ohshima H |
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| Affiliation: | Base Technol. Res. Center, Seiko Epson Corp., Suwa ; |
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| Abstract: | A high-resolution low-temperature polysilicon thin-film transistor driven light emitting polymer display (LT p-Si TFT LEPD) with integrated drivers has been developed. We adopted conductance control of the TFT and optimized design and voltage in order to achieve good gray scale and simple pixel circuit. A p-channel TFT is used in order to guarantee reliability in dc bias. An inter-layer reduces parasitic capacitance of bus lines. Because of the combination of the LT p-Si TFT and LEP, the display is thin, compact, and lightweight, as well as having low power consumption, wide viewing angle, and fast response |
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