Defect-free silicon film on SiO2 formed by zone meltingrecrystallization with high scanning speed

The recrystallization of polysilicon films on silicon dioxide at high scanning speed, in the range of 5≈15 mm/s, with an RF-induced graphite strip heater system is discussed. The films are in (100) orientation and contain subgrain boundaries (SGBs). Heat-sink and valley structures have been used to localize these SGBs. Defect-free silicon films have been obtained with good uniformity and reproducibility. The differences between the results obtained with fast scanning and the conventional slow scanning is analyzed. n-channel and p-channel MOSFETs have been fabricated in the recrystallized silicon film to characterize electrical properties such as mobilities and leakage currents, and they show very good characteristics