A new `shift and ratio' method for MOSFET channel-length extraction |
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| Authors: | Taur Y. Zicherman D.S. Lombardi D.R. Restle P.J. Hsu C.H. Nanafi H.I. Wordeman M.R. Davari B. Shahidi G.G. |
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| Affiliation: | IBM Thomas J. Watson Res. Center, Yorktown Heights, NY; |
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| Abstract: | A shift-and-ratio method for extracting MOSFET channel length is presented. In this method, channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results. It is shown to yield more accurate and consistent channel lengths for deep-submicrometer CMOS devices at room and low temperatures. It is also found that, for both nFET and pFET, the source-drain resistance is essentially independent of temperature from 300 to 77 K |
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