| Ⅲ/Ⅴ族化合物半导体器件的空间应用可靠性 |
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| 引用本文： | 张新焕,刘军霞.Ⅲ/Ⅴ族化合物半导体器件的空间应用可靠性[J].电子产品可靠性与环境试验,2012,30(5):46-50. |
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| 作者姓名： | 张新焕 刘军霞 |
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| 作者单位： | 中国电子科技集团公司第五十五研究所,江苏南京,210016 |
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| 摘 要： | 论述了Ⅲ/Ⅴ半导体器件在空间系统应用中的可靠性和质量鉴定方法。讨论了空间应用中该类器件常见的失效机制、辐射效应以及其它与高可靠性空间应用中相关的可靠性鉴定技术方法。
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| 关 键 词： | 失效机制 质量鉴定 辐射效应 |
Reliability of III/V Semiconductor Devices in Space Applications |
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| ZHANG Xin-huan
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LIU Jun-xia.Reliability of III/V Semiconductor Devices in Space Applications[J].Electronic Product Reliability and Environmental Testing,2012,30(5):46-50. |
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| Authors: | ZHANG Xin-huan LIU Jun-xia |
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| Affiliation: | (NO.55 Research Institute of CETC, Nanjing 210016, China) |
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| Abstract: | The reliability qualification issues related to III/V semiconductor devices in critical space systems are presented. The common failure mechanisms, radiation effects and the reliability qualification methods for devices in high reliability space applications are discussed. |
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| Keywords: | failure mechanisms qualification radiation effects |
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