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High rate deposition of hard a-C:H films using microwave excited plasma enhanced CVD
Authors:M Günther  I Bialuch  S Peter  K Bewilogua  F Richter
Affiliation:1. Department of Physics, College of Science, Engineering and Technology, University of South Africa, Private Bag X6, Florida 1710, South Africa;2. Nanotechnology and Integrated Bioengineering Centre (NIBEC), University of Ulster at Jordanstown, Shore Road, BT37 0QB, Northern Ireland, United Kingdom;3. Department of Physics, School of Natural Sciences, Shiv Nadar University, Gautam Budh Nagar 201314, Uttar Pradesh, India;4. Amity Institute of Nanotechnology, Amity University Uttar Pradesh, Noida 201301, India
Abstract:High rate deposition processes for hydrogenated diamond-like carbon films (a-C:H) were developed using microwave plasma enhanced CVD (PECVD) techniques. Basic investigations were carried out in a laboratory scale deposition apparatus (0.04 m3 chamber) and after that the processes were transferred to an industrial scale PECVD machine (1 m³) and optimized therein. The application of an asymmetric bipolar pulsed mid-frequency substrate bias allowed controlling the ion fluxes to the growing films independently of the generation of film forming species (radicals and ions) by the microwave plasma source. After preliminary experiments using five different hydrocarbon precursors, more thorough investigations were done with the selected precursors acetylene (C2H2) and isobutene (C4H8; isobutylene, 2-Methyl-1-propene). The a-C:H films were characterised with respect to deposition rates, hardness, abrasive wear rates, internal stresses and topography.Wear resistant, atomically smooth a-C:H films with a hardness above 25 GPa were deposited at a very high rate of 15 μm/h. The combination of high rate and high hardness values should be promising for industrial applications, even for in-line technologies. For the both mentioned precursors C2H2 and C4H8 some differences in hardness–rate relations were observed.
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