Influence of synthesis conditions on optical and electrical properties of CaTiO3:Pr3+ thin films deposited by radiofrequency sputtering for electroluminescent device |
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| Authors: | Ludovic Sarakha Thomas Bégou Antoine Goullet J Cellier Angélique Bousquet E Tomasella T Sauvage Philippe Boutinaud Rachid Mahiou |
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| Affiliation: | 1. Clermont Université, UBP, Laboratoire des Matériaux Inorganiques, BP 10448, F-63000 Clermont-Ferrand, France;2. CNRS, UMR 6002, 63177 Aubière, France;3. Institut des Matériaux Jean Rouxel, UMR 5602 CNRS-Université de Nantes, 2 rue de la Houssinière BP 32229, 44322 Nantes Cedex 3, France;4. Clermont Université, ENSCCF, Laboratoire des Matériaux Inorganiques, BP 10448, F-63000 Clermont-Ferrand, France;5. Laboratoire Conditions Extrêmes et Matériaux: Haute température et Irradiation, UPR CNRS 3079, 3a rue de la Férollerie, 45071 Orléans cedex 2, France;1. School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China;2. School of Environmental Science and Safety Engineering, Tianjin University of Technology, Tianjin 300384, China;3. Tianjin Key Lab for Photoelectric Materials & Devices, Tianjin University of Technology, Tianjin 300384, China;1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China;2. School of Mathematics and Physics, Xinjiang Agricultural University, Urumqi 830052, China;1. State Key Lab of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China;2. Department of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen, 333001, P. R. China;3. Department of Physics, Zhejiang University, Hangzhou, 310027, P.R. China;1. Bursa Uludag University, Department of Physics, Faculty of Arts and Sciences, Gorukle Campus, 16059, Bursa, Turkey;2. Bak?rcay University, Faculty of Engineering and Architecture, Department of Fundamental Sciences, Menemen, Izmir, Turkey;3. Cukurova University, Physics Department, Arts-Sciences Faculty, 01330, Adana, Turkey;4. Jazan University, Physics Department, P.O. Box 114, 45142, Jazan, Saudi Arabia;5. China University of Geosciences, School of Science, Beijing, 100083, China;6. Museo Nacional Ciencias Naturales, Jose Gutierrez Abascal 2, Madrid, 28006, Spain;7. Çukurova University, Vocational School of Imamoglu, Department of Computer Technologies, 01700, Adana, Turkey;8. Manisa Celal Bayar University, Department of Physics, Faculty of Arts and Sciences, Muradiye, Manisa, 45010, Turkey;9. Manisa Celal Bayar University, Hasan Ferdi Turgutlu Technology Faculty, Mechatronics Engineering, Turgutlu, Manisa, Turkey;10. Omer Halisdemir University, Faculty of Arts and Sciences, Physics Department, Nigde, Turkey;1. Physics Department, Arts-Sciences Faculty, Cukurova University, 01330, Adana, Turkey;2. Department of Physics, Faculty of Arts and Sciences, Bursa Uludag University, Gorukle Campus, 16059, Bursa, Turkey;3. Physics Department, Jazan University, P.O. Box 114, 45142, Jazan, Saudi Arabia;1. National University of Science and Technology “MISIS”, SHS Research and Education Centre MISIS-ISMAN, Leninsky prospect, 4, Moscow 119049, Russia;2. Institute of Structural Macrokinetics and Materials Science, Russian Academy of Sciences,ul. Academica Osipyana, 8, Chernogolovka, Moscow Region 142432, Russia |
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| Abstract: | CaTiO3:Pr3+ is a phosphor of great interest for electroluminescence application owing to its intense red emission characterized by CIE coordinates very close to those of the NSTC “ideal red”. In this paper, thin films of CaTiO3:Pr3+ are deposited by radiofrequency sputtering technique in pure argon and post-treated by Rapid Thermal Annealing (RTA). The influence of the deposition pressure (0.125–4.5 Pa) and annealing conditions on the optical and electrical properties of the thin films is investigated. The chemical composition of the as-deposited films, checked by Rutherford Backscattering Spectroscopy (RBS), is close to that of the ceramic target used for the deposition. The crystal structure is confirmed to be orthorhombic by X-ray diffraction. We highlight an improvement of the optical and electrical properties of the films after RTA treatment. Moreover, a net gain is obtained by comparison with conventional thermal treatment procedures in classical furnaces, especially for the reduction of electrical defect densities. |
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