Effect of dysprosia doping on structural and electrical property of stabilized zirconia for intermediate- temperature SOFCs |
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Authors: | M Pastor S Maiti A Pandey K Biswas I Manna |
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Affiliation: | Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur - 721302 |
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Abstract: | Present work deals with structural, micro-structural and electrical properties of dysprosia stabilized zirconia electrolyte, which have been evaluated by means of X-ray diffraction (XRD) and scanning (SEM), and complex impedance analysis respectively. The amount of dysprosia was varied from 2 to 12 mol% in zirconia. The addition of dysprosia (8-12 mol%) stabilized the cubic zirconia phase, which was analyzed from XRD analysis. SEM micrographs clearly showed the improvement in sinterability with increase in dysprosia concentration up to 6 mol% disprosia. Complex impedance analysis was performed in the temperature range from 250 to 600 °C. The results indicated a gradual decrease in impedance of both bulk and grain boundary and increase in conductivity with dysprosia doping up to 6 mol% and thereafter showing a reverse trend. The activation energies for oxygen ion migration were also found to decrease with increase in dysprosia doping which was in the range of 0.99 ? 1.28 eV. The average thermal expansion coefficient increases linearly. |
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