Influence of auxiliary plasma source and ion bombardment on growth of TiO2 thin films |
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| Authors: | A Gjevori JW Gerlach D Manova W Assmann E Valcheva S Mändl |
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| Affiliation: | 1. Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Russia;2. Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia;3. Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk 630090, Russia;4. Institute of Chemistry, Tyumen State University, Tyumen 625003, Russia |
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| Abstract: | By inserting an auxiliary rf plasma source in an experimental setup for depositing TiO2 thin films with a cathodic vacuum arc and high voltage pulses, i.e. metal plasma immersion ion implantation & deposition (MePIIID), it is shown that this auxiliary plasma source can increase the growth rate at low gas flow ratios only but not increase the oxygen/titanium ratio. It can be surmised that the plasma source creates activated oxygen species which are otherwise supplied from collisions of the titanium plasma stream with the background gas at higher pressures. |
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