Temperature dependence of electronic parameters of organic Schottky diode based on fluorescein sodium salt |
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| Authors: | I.S. Yahia A.A.M. Farag F. Yakuphanoglu W.A. Farooq |
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| Affiliation: | 1. Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt;2. Department of Metallurgical and Materials Engineering, Firat University, Elazi?, Turkey;3. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh 11451, Saudi Arabia |
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| Abstract: | The electrical properties of an organic Schottky diode based on fluorescein sodium salt were investigated by current density–voltage and capacitance–voltage measurements. The crystal structure of fluorescein sodium salt, FSS in powder form was analyzed by X-ray diffraction method. X-ray diffraction results showed that the fluorescein sodium salt has a polycrystalline structure with a monoclinic system. The current density–voltage and capacitance–voltage characteristics of Al/FSS Schottky diode were investigated in the temperature range of 300–400 K. The diode exhibits a rectifying behavior, indicating the formation of the Schottky type junction at the interface of Al/FSS. The predominant charge transport mechanism of the Al/FSS Schottky diode was discussed and the proposed current injection processes was presented. The temperature dependence of the calculated acceptor concentration, the built-in potential and the width of the depletion region of Al/FSS Schottky barrier was also determined. |
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