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Deposition of PZT thin film onto copper-coated polymer films by mean of pulsed-DC and RF-reactive sputtering
Authors:G Suchaneck  R Labitzke  B Adolphi  L Jastrabik  P Adamek  J Drahokoupil  Z Hubicka  DA Kiselev  AL Kholkin  G Gerlach  A Dejneka
Affiliation:1. TU Dresden, Institut für Festkörperelektronik, 01062 Dresden, Germany;2. Fraunhofer Institut für Elektronenstrahl- und Plasmatechnik Dresden, 01277 Dresden, Germany;3. TU Dresden, Institut für Halbleiter- und Mikrosystemtechnik, 01062 Dresden, Germany;4. Institute of Physics, Academy of Science, Na Slovance 2, 182 21 Prague 8, Czech Republic;5. University of Aveiro, Department of Ceramics and Glass Engineering & CICECO, 3810-193 Aveiro, Portugal;1. Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY, UK;2. Process and Environmental Research Division, Faculty of Engineering, The University of Nottingham, Nottingham NG7 2RD, UK;3. Department of Chemical Engineering, KU Leuven, Campus Kortrijk, Etienne Sabbelaan 53, 8500 Kortrijk, Belgium;1. Department of Electronics Engineering, Chang Gung University, Taoyuan 33302, Taiwan;2. Division of Natural Science, Center for General Education, Chang Gung University, Taoyuan 33302, Taiwan
Abstract:In this work, Pb(Zr,Ti)O3 (PZT) thin films were deposited onto flexible Cu-coated Kapton® substrates by means of reactive magnetron sputtering for the first time. Different power supplies were selected for each of the 200 mm targets to adjust film composition and substrate ion bombardment. High-power pulse sputtering has been employed for the Zr-target to enhance for formation of nanocrystals, pulsed DC sputtering for the Ti-target to provide a high enough sputter yield, and RF-sputtering for the Pb-target to prevent droplet formation. The deposited films had a lead-enriched layer at the surface and their film composition was in rhombohedral range near the morphotropic phase boundary of the PZT phase diagram. XRD revealed a nanocrystallite mixture of lead, zirconium and titanium oxides in the as-deposited films which can be transferred into perovskite Pb(Zr,Ti)O3 by rapid temperature annealing. Observed piezoelectric properties demonstrate that rapid-temperature-annealed films are promising for application in flexible piezoelectric sensors, actuators and power generators.
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