| 太阳能级多晶硅中痕量金属杂质含量的ICP-MS测定 |
| |
| 引用本文： | 刘志娟,褚连青,何秀坤,曹全喜. 太阳能级多晶硅中痕量金属杂质含量的ICP-MS测定[J]. 电子科技, 2010, 23(8): 40-42 |
| |
| 作者姓名： | 刘志娟 褚连青 何秀坤 曹全喜 |
| |
| 作者单位： | 西安电子科技大学,技术物理学院,陕西,西安,710071;工业和信息化部,专用材料监督检测中心,天津,300192 |
| |
| 摘 要： | 研究了电感耦合等离子体质谱法(ICP-MS),测定太阳能级电池用硅材料中Al,Fe,Ca,Mg,Cu,Zn,Cr,Ni和Mn等痕量元素的分析方法。考察测量过程中的质谱干扰及基体元素产生的基体效应,讨论了可能的消除方法,考察了内标元素Sc,Y,Rh等对基体抑制效应的补偿。采用Sc和Rh做内标元素补偿基体效应和灵敏度漂移,在测定中取得良好的效果。样品的加标回收率为90.0%～107.1%,相对标准偏差(RSD)0.9～3.4%,检出限为0.030～0.500 μg/L。
|
| 关 键 词： | ICP-MS 多晶硅 金属杂质 |
Determination of Trace Metal Impurities in Solar Grade Polysilicon by ICP-MS |
| |
| Liu Zhijuan,Chu Lianqing,He Xiukun,Cao Quanxi. Determination of Trace Metal Impurities in Solar Grade Polysilicon by ICP-MS[J]. Electronic Science and Technology, 2010, 23(8): 40-42 |
| |
| Authors: | Liu Zhijuan Chu Lianqing He Xiukun Cao Quanxi |
| |
| Affiliation: | (1.Schcd of Techndogy Physics,Xidian University,Xi'an 710071,China;
2.Center of Material Characterization,Ministry of Industry and Information Technology,Tianjin 300192,China) |
| |
| Abstract: | This paper describes the method for the determination of trace Al、Fe、Ca、Mg、Cu、Zn、Cr、Ni and Mn in solar grade polysilicon by inductively coupled plasma mass spectrometry.The mass spectral interference and the matrix effect are discussed.Sc and Rh are used as internal standard to corrected the interference due to the effects of matrix and interface efficiently.Under the optimum conditions the detection limits for impurities were in the range of 0.030 g/L～0.500 g/L.The recoveries were within 90.0%～107.1% and relative standard deviation within 0.9%～3.4%. |
| |
| Keywords: | ICP-MS |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《电子科技》浏览原始摘要信息 |
|
点击此处可从《电子科技》下载全文 |
|
