Influence of Cd-rich Annealing on Defects in Te-rich CdZnTe Materials |
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Authors: | Fengfeng Sheng Jianrong Yang Shiwen Sun Changhe Zhou Huixian Yu |
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Affiliation: | 1. Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, People’s Republic of China
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Abstract: | The influence of Cd-rich annealing at temperatures of 440–900 °C on the defect properties of Te-rich CdZnTe materials was studied. Cd-rich annealing at temperatures above the melting point of Te was confirmed to effectively reduce the size of Te-rich inclusions in the materials. However, dislocation multiplication occurred in the regions near Te-rich inclusions. Etch pit clusters were observed on the surfaces of annealed materials etched with Everson etchant. The etch pit clusters were much larger than the as-grown Te-rich inclusions. The dependence of the cluster size on that of the Te-rich inclusions and the annealing conditions was investigated. The density of etch pits in the normal region increased when the annealing temperature exceeded 750 °C. The mechanisms of the evolution of the Te-rich inclusions and the formation of new defects during the Cd-rich annealing are discussed. |
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