Automatic VT extractors based on ann×n2 MOS transistor array and theirapplication |
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Authors: | Wang Z. |
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Affiliation: | Dept. of Electr. Eng., Swiss Federal Inst. of Technol., Zurich; |
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Abstract: | The development of incremental and decremental VT extractors based on the square-law characteristic and an n ×n2 transistor array is described. Different implementations have been discussed and the effect of nonidealities such as mobility reduction, channel-length modulation, mismatch, and body effect has been analyzed. Besides automatic VT extraction, parameter K of an MOS transistor can also be extracted automatically using the VT extractor, without any need of calculation and delay, and the extracted VT and K are, respectively, in voltage and current. Experimental results are presented and indicate that the differences between extracted values using the VT extractor and the most popular numerical method are as small as 0.15% and 0.064%. Additional applications, such as in level shifting, temperature compensation, and temperature measurement, where the VT extractor can be used either as a PTAT sensor or as a centigrade sensor, are presented |
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