Continuity equation based nonquasi-static charge model for independent double gate MOSFET |
| |
Authors: | Neha Sharan Santanu Mahapatra |
| |
Affiliation: | 1. Nano Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore, 560012, India
|
| |
Abstract: | Using the numerical device simulation we show that the relationship between the surface potentials along the channel in any double gate (DG) MOSFET remains invariant in QS (quasistatic) and NQS (nonquasi-static) condition for the same terminal voltages. This concept along with the recently proposed ‘piecewise charge linearization’ technique is then used to develop the intrinsic NQS charge model for a Independent DG (IDG) MOSFET by solving the governing continuity equation. It is also demonstrated that unlike the usual MOSFET transcapacitances, the inter-gate transcapacitance of a IDG-MOSFET initially increases with the frequency and then saturates, which might find novel analog circuit application. The proposed NQS model shows good agreement with numerical device simulations and appears to be useful for efficient circuit simulation. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|