Dislocation scattering in n-type modulation dopedAl0.3Ga0.7As/InxGa1-xAs/Al0.3Ga0.7As quantum wells

The mobility due to misfit dislocation scattering in n-type modulation doped Al_0.3Ga_0.7As/In_xGa_1-xAs/Al _0.3Ga_0.7As quantum wells is discussed. Initially, the dislocations are modeled as an array of orthogonal charged lines. The scattering potential is introduced, including both the coulombic and piezoelectric components. The expression for the mobility limited by dislocation scattering is established, and the anisotropic characteristics of mobility and its variation with various material and device parameters are presented and discussed