| Abstract: | Conclusion Using the apparatus developed by the authors, a series of measurements was carried out of the noise factor of prototypes of MOS transistors with an induced p-channel which were fabricated in the technological laboratory of the microelectronics chair of the Moscow Engineering Physics Institute.The apparatus described allows measurement of the spectral density of the noise (or the noise factor) by the comparison method in the frequency range from 0.1 to 100 Hz. The effective filter passband varies in the range from 10 to 100% of the resonant frequency. The sensitivity of the apparatus was determined by the sensitivity of the broadband amplifier used, and in our experiments it was 0.1 V2/Hz.The measurement error, which is determined by the error of each of the blocks of the apparatus, does not exceed 15%.Translated from Izmeritel'naya Tekhnika, No. 8, pp. 74–76, August, 1970. |
