| SiO2和Si3N4/SiO2薄膜表面驻极态的改善 |
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| 引用本文： | 夏钟福,邱勋林,朱伽倩,张冶文.SiO2和Si3N4/SiO2薄膜表面驻极态的改善[J].压电与声光,2002,24(3):208-212. |
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| 作者姓名： | 夏钟福 邱勋林 朱伽倩 张冶文 |
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| 作者单位： | 同济大学,波尔固体物理研究所,上海,200092 |
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| 基金项目： | 国家自然科学基金资助项目 (No.5 9682 0 0 3 )，中国科学院离子束开放研究实验室课题资助项目 |
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| 摘 要： | 描述了为改善其表面驻极态的抗湿能力，对Si基Si3N4和Si3N4/SiO2薄膜驻极体所进行的化学表面修正的基本原理。以六甲基二硅胺（HMDS）和二氯二甲基硅烷（DCDMS）两种化学修正试剂对这类薄膜驻极体的改性效果进行了对比性的研究。结果指出：从抗湿能力考虑，经DCDMS修正的氮、氧化硅驻极体的电荷稳定性优于HMDS处理的样品，是由于这类修正形成了更完善的表面单分子疏水层；但如果从驻极体的储电热稳定性方面考虑，以HMDS处理的样品优于DCDMS样品，是由于被HMDS修正的表面层内形成了较高浓度的深能级陷阱。
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| 关 键 词： | 化学表面修正 抗湿能力 电荷 热稳定性 六甲基二硅胺烷 二氯二甲基硅烷 |
| 文章编号： | 1004-2474(2002)02-0208-05 |
| 修稿时间： | 2001年9月19日 |
Improvement of Surface Electret State for SiO2 and Si3N4/SiO2 Film |
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| XIA Zhong fu,QIU Xun lin,ZHU Jia qian,ZHANG Ye wen.Improvement of Surface Electret State for SiO2 and Si3N4/SiO2 Film[J].Piezoelectrics & Acoustooptics,2002,24(3):208-212. |
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| Authors: | XIA Zhong fu QIU Xun lin ZHU Jia qian ZHANG Ye wen |
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| Abstract: | In this paper,in order to improve the surface electret state for enhancing humidity proof,the basic principle of chemical surface modification to silicon nitride film and silicon nitride/silicon dioxide double layer film based on silicon substrate was discussed.The comparison of improvement effect of chemical surface modification between HMDS(Hexamethyldisilazane)and DCDMS(Dichlorodimethylsilane)was investigated.It was pointed out that according to humidity proof ability,the films modified by DCDMS is better than that by HMDS,because the modification formed more perfect hydrophobic layer on the free surface of the films;however,according to thermal stability of charge stored in the electret,the films modified by HMDS is better than that by DCDMS,because higher concentration of deep traps was generated after modification by HMDS. |
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| Keywords: | chemical surface modification humidity proof ability charge storage thermal stability HMDS and DCDMS |
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