|
|||||
|
|
Contribution to carrier densities of the oxygen vacancy in a low-resistivity tin-doped indium oxide film by the hot-cathode plasma sputtering method |
|
| Authors: | Akihiko Kono Tatsuzo Nagai |
| Affiliation: | a Faculty of Engineering, Kyushu Kyoritsu University, Kitakyushu, 807-8585, Japan b Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology, Hakusan, 924-0838, Japan c Kyushu Kyoritsu University Research Center, Kitakyushu, 807-8585, Japan |
| Abstract: | In order to clarify the contribution to carrier density by oxygen vacancies in tin-doped indium oxide (ITO) films prepared on glass substrates by the hot-cathode plasma sputtering method, we have investigated the effect of annealing on the electrical properties of an ITO film with a resistivity of 1.0 × 10− 4 Ω cm. A drastic decrease in carrier density from 2.0 × 1021 to 0.88 × 1021 cm− 3 was found with gradual increase in the Hall mobility from 29 to 35 cm2 V− 1 s− 1 for repeated annealing cycles, when the ITO film was exposed for one hour to 400 °C oxygen gas at atmospheric pressure. The results indicate that the contribution of oxygen vacancies to carrier density was ca. 1.12 × 1021 cm− 3 for the ITO film with an overall carrier density of 2.0 × 1021 cm− 3. |
| Keywords: | Thin film Indium tin Oxide (ITO) film Transparent conducting oxide (TCO) film Sputtering |
| 本文献已被 ScienceDirect 等数据库收录！ | |