Ge2Sb2Te5 and PbZr0.30Ti0.70O3 composite films for application in phase change random access memory |
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| Authors: | Sannian Song Zhitang Song Bo Liu Liangcai Wu Songlin Feng |
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| Affiliation: | State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| Abstract: | The improvement in the phase change characteristics of Ge2Sb2Te5 (GST) films for phase change random access memory (PCM) applications was investigated by doping the GST films with PbZr0.30Ti0.70O3 (PZT) using cosputtering at room temperature. The doped films showed a retarded crystallization to a higher temperature and higher resistivity in the crystalline state compared to pure GST films. Phase separation has been observed in annealed GST-PZT films and the segregated domains exhibited relatively uniform size. The reduced reset voltage of GST-PZT based cell was due to the reduced programming volume by incorporating PZT into GST. This work clearly reveals the highly promising potential of GST-PZT composite films for application in PCM. |
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| Keywords: | Thin films Composite materials Electrical properties Nanocomposites |
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