Structural and optical properties of Al-doped SnO2 nanowires |
| |
Authors: | M. Lei |
| |
Affiliation: | Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Xiasha College Park, Hangzhou 310018, China |
| |
Abstract: | We report a facile thermal evaporation method for the syntheses of Al-doped SnO2 nanowires using Al-doped SnO2 nanoparticles as precursors. High-density, single-crystalline Al-doped SnO2 nanowires were directly grown on the 6H-SiC substrates without any catalyst. X-ray diffraction patterns show that the Al dopants are incorporated into the rutile SnO2 nanowires. The X-ray photoelectron spectra confirm the SnO2 nanowires doped with 5 at.% Al. The photoluminescence spectra of the Al-doped SnO2 nanowires exhibit that the large blue shift of the emission band can be observed in the Al-doped SnO2 nanowires compared with undoped nanowires. The distortion of the crystal lattices caused by incorporation of Al atoms at the interstitials should be responsible for the large blue shift of the emission band. |
| |
Keywords: | Nanomaterials Chemical vapor deposition Optical materials and properties |
本文献已被 ScienceDirect 等数据库收录! |