Growth and characterization of GaSb bulk crystals with low acceptor concentration |
| |
Authors: | A N Danilewsky S Lauer J Meinhardt K W Benz B Kaufmann R Hofmann A Dornen |
| |
Affiliation: | (1) Kristallographisches Institut, Albert-Ludwigs-Universitat, D-79104 Freiburg, Germany;(2) 4. Physikaliscb.es InstitutUniversitat, D-70550 Stuttgart, Germany |
| |
Abstract: | GaSb bulk single crystals with low acceptor concentration were grown from a bismuth solution by the traveling heater method.
The result is isoelectronic doping by Bi which gives a variation of the opto-electronic properties as a function of grown
length as well as a pronounced microscopic segregation. Photoluminescence spectra at 4K show a decrease of the natural acceptor
during growth, which is confirmed by Hall measurements. The electrical properties of this isoelectronic doped GaSb are hole
concentrations and mobilities of NA − ND = 1.7 × 1016 cm−3 and μ = 870 cm2Vs at room temperature and NA-ND = 1 × 1016 cm−3 and μ = 4900 cm2/Vs at 77K, respectively. The lowest p-type carrier concentration measured at 300K is NA − ND = 3.3 × 1015 cm−3 |
| |
Keywords: | Bi-solution bulk crystal growth gallium antimonide GaSb Hall measurements intrinsic acceptor photoluminescence traveling heater method |
本文献已被 SpringerLink 等数据库收录! |