| 用<111>硅的自停止腐蚀方法制作硅膜 |
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| 引用本文： | 黄庆安,秦明.用<111>硅的自停止腐蚀方法制作硅膜[J].传感器与微系统,1994(2):49-51. |
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| 作者姓名： | 黄庆安 秦明 |
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| 作者单位： | 东南大学微电子中心
(黄庆安，秦明，张会珍)，东南大学微电子中心(童勤义) |
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| 摘 要： | 利用各向异性腐蚀和键合工艺,提出了一种新的自停止腐蚀方法,该方法可以得到大于1μm厚的均匀硅膜,可用于微传感器研制。
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| 关 键 词： | 异性腐蚀 键合工艺 硅膜 微传感器 |
Silicon Film Fabricated by Using Etch Stop Method of < 111 > - oriented Silicon |
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| Huang Qingan Qin Ming Zhang Huizhen Tong Qinyi.Silicon Film Fabricated by Using Etch Stop Method of < 111 > - oriented Silicon[J].Transducer and Microsystem Technology,1994(2):49-51. |
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| Authors: | Huang Qingan Qin Ming Zhang Huizhen Tong Qinyi |
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| Abstract: | Based on the anisotropic etching and bonding technobgy, a new method for etch stop is put forward. Silicon film with the thickness larger than lμm can be obtained by using the method, which is applied to the fabrication of microsensors. |
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| Keywords: | Anisotropie etching Bonding technology Silicon film Microsensors |
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