| 还原性气体对SnO_2表面势垒的影响 |
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| 引用本文： | 林海安 吴冲若. 还原性气体对SnO_2表面势垒的影响[J]. 传感器与微系统, 1994, 0(3): 13-15,24 |
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| 作者姓名： | 林海安 吴冲若 |
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| 作者单位： | 东南大学(林海安)，东南大学(吴冲若) |
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| 摘 要： | 建立了SnO_2表面势垒与表面氧化—还原过程的定量关系,其中考虑了氧的O~-形式吸附和还原性气体的电离吸附。其结果表明,还原性气体的电离是SnO_2表面化学物理过程的关键步骤之一。
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| 关 键 词： | SnO_2 表面势垒 电离吸附 还原性气体 氧化—还原 |
The Effect of Reducing Gases on Surface Potential of SnO_2 |
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| Lin Haian Wu Chongruo. The Effect of Reducing Gases on Surface Potential of SnO_2[J]. Transducer and Microsystem Technology, 1994, 0(3): 13-15,24 |
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| Authors: | Lin Haian Wu Chongruo |
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| Affiliation: | Southeast University |
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| Abstract: | A quantitative relation between the potential and the oxidation-reduction process has been established on the SnCh surface. Both oxygen ionosorption and reducing gas ionosorption are taken into account. In conclusion, one of the key .steps of SnO2 surface process is the reducing gas innosorption. |
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| Keywords: | SnO2 Surface potential Ionsorption Reducing gas Oxidation-reduction |
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