| I—V Curve Characterization of n^＋／p／p^＋ Silicon Solar Cell |
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| 引用本文： | MabroukGAbdrhman YAOKai－lun 等.I—V Curve Characterization of n^＋／p／p^＋ Silicon Solar Cell[J].半导体光子学与技术,1999,5(4):226-228. |
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| 作者姓名： | MabroukGAbdrhman YAOKai－lun |
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| 作者单位： | [1]HuazhongUniversityofScience＆Technology,Wuhan430074,CHN [2]HuazhongUniversityofScience＆Technology,Wuhan43 |
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| 摘 要： | The analysis of solar cell performance has been done by simulating the external I-V characteristics of n^ /p/p^ single crystal silicon solar cell under high light intensity and 1.5 air mass(AM).This method allows the maximization of solar cell efficiency.To fabricate low-cost n^ /p/p^ single crystal silicon solar cells,solid source of doped phosphorous and boron was used.
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| 关 键 词： | 单晶硅 太阳能电池 效率 伏安特性曲线 |
| 收稿时间： | 1999/1/25 |
I-V Curve Characterization of n +/p/p + Silicon Solar Cell |
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| Mabrouk G Abdrhman,YAO Kai-lun,LI Chu-rong.I-V Curve Characterization of n +/p/p + Silicon Solar Cell[J].Semiconductor Photonics and Technology,1999,5(4):226-228. |
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| Authors: | Mabrouk G Abdrhman YAO Kai-lun LI Chu-rong |
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| Abstract: | The analysis of solar cell performance has been done by simulating the external I-V characteristics of n +/p/p + single crystal silicon solar cell under high light intensity and 1.5 air mass (AM). This method allows the maximization of solar cell efficiency. To fabricate low-cost n +/p/p + single crystal silicon solar cells, solid source of doped phosphorous and boron was used. |
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| Keywords: | Characteristics Efficiency Single Crystal Silicon Solar Cell |
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