PECVD法制备纳米晶硅薄膜的研究进展

简要介绍了纳米晶硅薄膜的微结构表征方法,重点讨论了PECVD制备方法中工艺参数对薄膜结构的影响,并探讨了氢在薄膜形成和生长中的作用。通过优化氢稀释率、衬底温度、反应气压、激励功率和激发频率等工艺参数可提高纳米晶硅薄膜的晶化率并改善薄膜质量。结合喇曼光谱、X射线衍射谱、傅里叶红外光谱和高分辨透射电镜等表征方法可深入研究薄膜形成机理,对进一步探索薄膜光电特性有重要意义。分析了等离子体化学气相沉积(PECVD)制备方法中各工艺参数对薄膜质量和沉积速率的影响,指出其存在的问题,并探寻了今后的研究方向。

Research Progress on Nanocrystalline Silicon Thin Films Prepared by PECVD

The measurement methods to characterize the nanocrystalline silicon thin film microstructure are introduced with the emphasis on the discussion of the influence of the plasma enhanced chemical vapor deposition(PECVD) process parameters on the thin film microstructure,and the effects of the hydrogen on the formation and growth of nanocrystalline silicon thin films are presented.The crystalline fraction and other properties of the nanocrystalline silicon thin films can be improved by optimizing the process parameters,such as the hydrogen dilution,substrate temperature,reaction pressure,driving power and excitation frequency.The film formation mechanism can be obtained by Raman spectroscopy,X-ray diffraction spectrum,Fourier transform infrared spectroscopy,high-resolution transmission electron microscope and other characterize methods,which is significant for the further study of the photoelectric properties of the films.The effects of the process parameters of the PECVD method on the film quality and deposition rate are analyzed.The limitations of the PECVD method and the development tendency in the future are presented.