半绝缘GaAs光电导开关中光激发电荷畴的猝灭畴模式

在半绝缘GaAs光电导开关中发现了光激发电荷畴的猝灭畴模式. 分析指出畴猝灭是由于畴在渡越中开关的瞬时电场低于畴的维持电场引起的，并指出在开关电场低于非线性光电导开关阈值电场条件下，在到达阳极前畴的猝灭可导致开关输出电流的振荡频率高于畴的渡越时间频率. 根据开关工作电路条件及畴特性给出了猝灭畴模式的等效电路，计算了相应的电路参数，计算结果与实验基本吻合. 该研究为提高光注入畴器件的振荡频率及工作效率提供了理论和实验依据.

Quenched-Domain Mode of Photo-Activated Charge Domain in Semi-Insulating GaAs Devices

The quenched domain mode of the photo-activated charge domain (PACD) in semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSSs) is observed.We find that the quenched domain is induced by the instantaneous electric field across the PCSS being lower than the sustaining electric field of the domain during the transit of the domain.The extinction of the domain before reaching the anode can lead to a current oscillation frequency larger than the transit-time frequency when the bias electric field is lower than the threshold electric field of the nonlinear PCSS.According to the operation circuit and the physical properties of a high-field domain,an equivalent circuit of the quenched domain is presented.The equivalent circuit parameters including capacitance,resonant frequency,and inductance are calculated and measured.Our calculations agree well with the experimental results.This research provides theoretical and experimental criteria for heightening the oscillation frequency and efficiency of PACD devices.