1.3-μm AlGaInAs buried-heterostructure lasers |
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Authors: | Takemasa K Kubota M Munakata T Wada H |
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Affiliation: | Opto-Electron. Labs., Oki Electr. Ind. Co. Ltd., Tokyo; |
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Abstract: | 1.3-μm AlGaInAs-InP strained multiple-quantumwell (MQW) buried-heterostructure (BH) lasers have been successfully fabricated. InP current blocking layers could be smoothly regrown using the simple HF pretreatment, although the etched active region includes Al-containing layers. The threshold current Ith was typically 11 mA for as-cleaved 350-μm-long devices, which is about 30% lower than that of the ridge laser counterparts. A maximum continuous-wave operating temperature as high as 155°C was achieved. For the 200-μm-long device with the high-reflective-coated rear-facet, Ith was as low as 7.5 mA and characteristic temperature T0 was 80 K. The BH lasers also provided more circular far-field patterns and lower thermal resistances than for ridge lasers |
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