立方相Y掺杂ZrO2纳米晶薄膜的制备与辐照效应研究

采用溶胶-凝胶结合旋涂法在单晶Si衬底上制备了立方相Y掺杂ZrO₂纳米晶薄膜(YSZ), 并分析了制备工艺参数对YSZ成膜的影响。采用光学显微镜、扫描电子显微镜、X射线衍射和透射电镜等手段对样品进行了表征和分析。结果表明, 加入PVA作为分散剂、采用分级干燥工艺以及提高匀胶转速可大大提高YSZ薄膜的成膜质量, 制备的YSZ薄膜表面十分平整, 没有出现裂纹。YSZ薄膜为立方相结构, 没有出现其它相。薄膜由平均晶粒尺寸为9.4 nm的纳米晶组成, 薄膜的厚度约为60 nm。在室温条件下, 低剂量的Xe离子辐照YSZ薄膜后出现微裂纹, 而当辐照剂量比较高时, 由于热峰效应, 辐照引起的微裂纹逐渐发生愈合。并且, 随着辐照剂量的增加, YSZ薄膜的平均晶粒尺寸增大。

Fabrication and Irradiation of Nanocrystalline Yttrium-stabilized Cubic ZrO2 Film

Nanocrystalline cubic yttrium-stabilized ZrO₂ films (YSZ) were prepared on silicon substrate via Sol-Gel combined with spin-coating method. The as-grown films were characterized by optical microscope, SEM, XRD and TEM. It was found that preparation parameters have obvious effect on quality of the YSZ film. The quality of YSZ thin films can be greatly improved by adding PVA as dispersing agent, adopting the grading drying process and increasing the spin speed. Smooth films without any cracks can be obtained by optimum growth conditions. XRD result shows that the film is cubic structure with no other phase. The thickness of the YSZ film is about 60 nm, and its average grain-size is 9.4 nm. When the samples are irradiated by Xe ions with low dose at room-temperature, microscopic cracks are detected in the YSZ films. As the ion irradiation dose increases, the irradiation-induced cracks are gradually recovered, which might attribute to the thermal spike effect on the film. In addition, the average grain-size of the YSZ film grows with irradiation dose increasing.