碘化铟(InI)多晶的水平区熔提纯

采用水平区熔法对由两温区气相输运法制备的InI多晶进行提纯, 探索高纯、单相InI多晶的制备工艺。通过X射线粉末衍射仪、扫描电子显微镜以及电感耦合等离子体原子发射光谱仪对水平区熔提纯前后的InI多晶的晶格结构、形貌组分以及杂质浓度进行了表征。结果表明, 经过水平区熔提纯后的InI多晶晶格结构完整, 质量较高, 晶格参数为a=0.476 nm, b=1.278 nm, c=0.491 nm, 与理论值十分接近; In、I化学配比得到了有效调节, 其化学配比接近理论化学配比1: 1; 中间产物含量及杂质浓度显著降低。以提纯后InI多晶为原料, 用提拉法生长出的InI单晶电阻率达到10¹⁰ Ω·cm。

Horizontal Zone Refining of Indium Iodide (InI) Polycrystal

The indium iodide (InI) polycrystal which was synthesized by two-zone vapor transporting method was purified by using horizontal zone refining method. Preparation process on high quality and single phase InI polycrystal was successfully fixed. The lattice structure, morphology, component and impuritily concentration of InI crystal were investigated by X-Ray Diffraction (XRD), Scanning Electron Microscope-Energy Dispersive Spectrometer (SEM-EDS) and Inductively Coupled Plasma Atomic Emission Spectrometry (ICP-AES). The results indicate that the InI polycrystal after refinement has better lattice structure and higher quality than before. The lattice constants of a, b and c are 0.476 nm, 1.278 nm and 0.491 nm, respectively, which are very close to the theoretical values. The stoichiometric ratio of In to I is effectively modified and close to the theoretical stoichiometric ratio 1:1. The intermediate products and impurities concentrations decrease significantly. An InI single crystal with high resistivity (about 10¹⁰ Ω·cm) is grown by Czochralski (CZ) method with the purified InI polycrystal obtained in this work.