| 用脉冲激光沉积方法制备氮化铝薄膜 |
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| 引用本文： | 凌浩,施维,孙剑,应质峰,吴嘉达,李富铭,王康林,丁训民.用脉冲激光沉积方法制备氮化铝薄膜[J].中国激光,2001,28(3):272-274. |
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| 作者姓名： | 凌浩 施维 孙剑 应质峰 吴嘉达 李富铭 王康林 丁训民 |
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| 作者单位： | 1. 复旦大学三束材料改性国家重点实验室
2. 复旦大学应用表面物理国家重点实验室 上海 200433 |
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| 基金项目： | 国家自然科学基金! (6 98780 0 4)，上海市科技发展基金! (98JC140 11)资助项目 |
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| 摘 要： | 介绍了用脉冲激光沉积 (PLD)方法制备AlN薄膜的工作 ,在Si(10 0 )衬底上得到了光滑平整、透明度高的AlN薄膜 ,由实验结果拟合得到能隙宽度为 5 7eV。考察了衬底温度和退火温度的影响。
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| 关 键 词： | 脉冲激光沉积 氮化铝 激光烧蚀 |
| 收稿时间： | 1999/10/8 |
Preparation of Aluminum Nitride Films Using Pulsed Laser Deposition |
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| LING Hao SHI Wei SUN Jian YING Zhi feng WU Jia da LI Fu ming WANG Kang lin DING Xun min State Key Laboratory for Materials Modification by Laser,Ion and Electron Beams,National Key Laboratory of Applie.Preparation of Aluminum Nitride Films Using Pulsed Laser Deposition[J].Chinese Journal of Lasers,2001,28(3):272-274. |
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| Authors: | LING Hao SHI Wei SUN Jian YING Zhi feng WU Jia da LI Fu ming WANG Kang lin DING Xun min State Key Laboratory for Materials Modification by Laser Ion and Electron Beams National Key Laboratory of Applie |
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| Affiliation: | LING Hao 1 SHI Wei 1 SUN Jian 1 YING Zhi feng 1 WU Jia da 1 LI Fu ming 1 WANG Kang lin 2 DING Xun min 2 1State Key Laboratory for Materials Modification by Laser,Ion and Electron Beams,2National Key Laboratory of Applie |
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| Abstract: | This paper describes the preparation of AlN films using pulsed laser deposition. Smooth and highly transparent AlN films were deposited on Si (100) substrates. The gap of the films was determined to be 5.7 eV. The effects of substrate temperature and annealing temperature were also examined. |
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| Keywords: | pulsed laser deposition aluminum nitride laser ablation |
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