| ITO透明导电膜高速成膜的研发 |
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| 引用本文： | 孙大雄,菊池和夫. ITO透明导电膜高速成膜的研发[J]. 光学仪器, 1999, 0(Z1) |
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| 作者姓名： | 孙大雄 菊池和夫 |
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| 作者单位： | 新科隆株式会社!东京140-8540 |
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| 摘 要： | 论述了一种采用低能量大束流高密度等离子体作为离子辅助沉积技术、沉积ＩＴＯ薄膜的方法。实验结果表明离子轰击可以有效地增加薄膜的聚集密度，同时减低薄膜的电阻率。此外，高密度等离子体促进了ＩＴＯ薄膜制备过程的氧化，进而大大提高了ＩＴＯ薄膜的沉积速度。
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| 关 键 词： | ITO薄膜 等离子体源 沉积技术 |
Development of a High Deposition Rate Technique for the ITO Thin Film Production |
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| SON Daiyu KIKUCHI Kazuo. Development of a High Deposition Rate Technique for the ITO Thin Film Production[J]. Optical Instruments, 1999, 0(Z1) |
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| Authors: | SON Daiyu KIKUCHI Kazuo |
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| Abstract: | The process is to adopt the low energy and high ion current density plasma source as an ion assisted when evaporated ITO thin film.The results show that the packing density of ITO thin film is denser because of the bombardment of ion,and leads to reduce the resistivity of ITO film.Moreover,high ion current density plasma can make the ITO to enough oxidization at a high deposition rate as almost a hundred times against as conventional ITO evaporation. |
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| Keywords: | ITO Thin Film Plasma Source Deposition Technique. |
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