基于阳极氧化铝基板的圆片级板载芯片封装技术

提出了一种新型基于阳极氧化铝基板的板载芯片（Chip on Board）封装技术。在5 wt.%，30℃的草酸电解液中采用60 V直流电压，制备了0.1 mm厚度的阳极氧化铝基板圆片，铝导线最小线宽、电阻及导线间绝缘电阻分别为35μm、小于1Ω/cm与大于1×1010Ω。在超薄阳极氧化铝基板圆片进行了双层Flash裸芯片堆叠及金丝引线键合，实现了圆片级COB封装，成品率高于93%。最后，将COB单元进行三维堆叠封装，制备了32 Gb Flash模组。因此基于阳极氧化铝基板的板载芯片封装技术具有较大的应用前景。

A wafer level chip on board package based on anodic alumina substrate

A novel chip on board(COB)technology based on thin anodic alumina substrate is proposed. The 0.1mm thickness anodic alumina substrate is developed by oxalic anodized method with 60 V voltage and 30℃tempera?ture,and the line width,resistance of Al interconnect and insulation resistance between Al interconnects are 35μm,below 1Ω/cm and over 1×1010Ω,respectively. The wafer-level COB wafer,which includes an anodic alumina wafer and flash chips,is achieved by chip-on-chip SMT,and the yield is over 93%. Finally,a NAND Flash module has been developed. Furthermore,the COB package technology based on anodic alumina substrate has a wide appli?cation prospect.