Mg2+离子表面修饰ZnO传感器阵列的乙醚敏感机理研究

为研究金属离子对金属氧化物半导体的表面敏化作用，以均匀沉淀法制备了ZnO纳米颗粒，并通过金属离子表面微滴注以及二次退火的方法制备出金属离子表面修饰的平面型ZnO气体传感器阵列。并以乙醚蒸汽为目标气体，进行气敏性能测试。发现大部分传感器对乙醚响应性很好，并且经过表面修饰，ZnO的乙醚敏感性能大多得到提升。特别地，Mg2+表面修饰的ZnO膜层展现了最优的气敏性能。X射线光电子能谱和光致发光谱证实，经过Mg2+表面修饰之后，氧空位缺陷浓度明显增加，并且表面羟基基团的数量显著减少，二者的协同作用构成了Mg2+表面修饰ZnO的敏化机制。

Diethyl ether sensing mechanism of ZnO sensor array surface modified by Mg2+ ion

In order to study the surface sensitization effect of metal cations on metal oxide semiconductor,ZnO nano?structures were synthesized via homogeneous precipitation approach,and then surface micro injection was conduct?ed using six categories of metal chloride solutions followed by secondary annealing procedure. The obtained planar ZnO sensing layers modified through surface micro injection were used to detect target diethyl ether(DEE)vapor. The results indicated that the as-fabricated gas sensors mostly exhibit high response toward DEE vapor,and the sensing properties of most surface modified sensors proved better than those of unmodified ZnO sensors. In particu?lar,the ZnO layer surface modified by Mg2+ion exhibited an obvious sensitization effect. The sensing mechanism of Mg2+surface modified ZnO towards DEE vapor was investigated by X-ray photoelectron spectroscopy and photolumi?nescence spectra,revealing that a synthetic effect of the oxygen vacancy enhancement and surface OH groups’at?tenuation was dominant mechanismof improved gas sensing performance.