Effects of annealing on electrical properties of Se-implanted GaAs |
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Authors: | Tang A.C.T. Sealy B.J. Rezazadeh A.A. |
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Affiliation: | Surrey Univ., Guildford, UK; |
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Abstract: | Observes for the first time reversible changes in the sheet carrier concentration of rapid thermally annealed Se-implanted GaAs samples during subsequent heat treatments. The electrical profiles of the Se-implanted samples have also been modified during the annealing processes. These modifications can lead to significant degradation in the performance of devices.<> |
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