Electrical properties of a-axis aligned lanthanum-modified lead titanate thin films prepared using sol-gel process

The (100) epitaxial lanthanum-modified lead titanate (PLT) film was fabricated using sol-gel method on platinized MgO substrates. The substrate used was Pt(100)JTi(100)JMgO where Pt and Ti layers had been sputter-deposited at 600°C. We used the direct furnace insertion method and the crystallization temperature of 700°C in order to fabricate the epitaxial film. The phase of the film was examined using x-ray diffraction (XRD) and the film orientation was examined by pole figure and x-ray rocking curves. The epitaxial PLT thin film had higher dielectric constant and better ferroelectricity and fatigue resistance than the polycrystalline films. However, it shows higher leakage current than the polycrystalline film.