Effect of doping on properties of Zno:Cu and Zno:Ag thin films |
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Authors: | T. Kryshtab V. S. Khomchenko V. B. Khachatryan N. N. Roshchina J. A. Andraca-Adame O. S. Lytvyn V. I. Kushnirenko |
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Affiliation: | (1) Instituto Politécnico Nacional – ESFM, Av. IPN, Ed. 9 U.P.A.L.M, Mexico, DF, 07738, Mexico;(2) Institute of Semiconductor Physics, NAS of Ukraine, 41, Pr. Nauky, Kiev, 03028, Ukraine |
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Abstract: | ZnO:Cu and ZnS thin films were grown by metal-organic chemical vapour deposition (MOCVD) under atmospheric pressure onto glass substrates. The ZnO:Ag films were fabricated from ZnS films by non-vacuum method that consists of simultaneous oxidation and Ag-doping by the close spaced evaporation (CSE) of silver at the temperature of 500–600 °C. Photo-assisted rapid thermal annealing (PARTA) at ambient air during 10–30 s at the temperature of 700–800 °C was used for the ZnO:Cu films. The samples were studied by X-ray diffraction technique (XRD), atomic force microscopy (AFM), and photoluminescence (PL) measurements. The grain size of ZnO:Cu films increased with an increase of Cu concentration. PL spectra of as-deposited ZnO:Cu films depended on Cu concentration and contained the bands typical for the copper. After PARTA at high temperature the emission maximum shifted towards the short-wave region. During the fabrication of ZnO:Ag films the grain growth process was strongly affected by the Ag loading level. The grain size increased with an increase of Ag concentration and ZnO:Ag films with surface roughness of 8 nm were obtained. Observed 385 nm PL peak for these samples can be attributed to the exciton–exciton emission that proves the high quality of the obtained ZnO:Ag films. |
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