| InAs自组织生长量子点的空穴俘获势垒 |
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| 引用本文： | 王海龙 朱海军. InAs自组织生长量子点的空穴俘获势垒[J]. 红外与毫米波学报, 1999, 18(5): 397-401 |
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| 作者姓名： | 王海龙 朱海军 |
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| 作者单位： | 中国科学院半导体研究所,半导体超晶格国家重点实验室,北京,100083 |
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| 基金项目： | 国家攀登计划，国家自然科学基金 |
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| 摘 要： | 成功地用深能级瞬态谱（ＤＬＩＳ）研究了ｐ 型ＩｎＡｓ 自组织生长的量子点的电学性质，测得２．５ 原子层ＩｎＡｓ 量子点空穴基态能级在ＧａＡｓ 价带底上约０．０９ｅＶ，该量子点在荷电状态发生变化时需要克服一个势垒，俘获势垒高度为０．２６ｅＶ．本工作首次利用ＤＬＴＳ测定了量子点空穴的基态能级和俘获势垒，相信对增加量子点性质的理解会起到有益的帮助
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| 关 键 词： | 深能级瞬态谱(DLTS) 自组织生长量子点 |
HOLE CAPTURE BARRIER OF SELF-ORGANIZED InAs QUANTUM DOTS |
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| WANG Hai-Long,ZHU Hai-Jun,NING Dong,CHEN Feng,FENG Song-Lin. HOLE CAPTURE BARRIER OF SELF-ORGANIZED InAs QUANTUM DOTS[J]. Journal of Infrared and Millimeter Waves, 1999, 18(5): 397-401 |
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| Authors: | WANG Hai-Long ZHU Hai-Jun NING Dong CHEN Feng FENG Song-Lin |
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| Abstract: | Deep level transient spectroscopy (DLTS) technique was successfully applied to characterize the electric properties of p type self organized InAs quantum dots The ground state energy and capture barrier energy of hole of quantum dots were measured for the first time The energy of ground state of 2 5ML InAs quantum dots with respect to the valence band of bulk GaAs was obtained being about 0 09eV, and there was a barrier associated to the change of charge state of quantum dots The capture barrier energy of such dots for hole was about 0 26eV The work is very meaningful for further understanding the intrinsic properties of quantum dots |
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| Keywords: | InAs/GaAs |
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