掺杂和未掺杂LEC GaAs中EL2和位错密度分布 |
| |
引用本文: | 杨瑞霞,刘文杰,李光平,华庆恒. 掺杂和未掺杂LEC GaAs中EL2和位错密度分布[J]. 固体电子学研究与进展, 1988, 0(3) |
| |
作者姓名: | 杨瑞霞 刘文杰 李光平 华庆恒 |
| |
作者单位: | 河北工学院(杨瑞霞,刘文杰),天津电子材料研究所(李光平),天津电子材料研究所(华庆恒) |
| |
摘 要: | 测量比较了掺Si和未掺杂LEC GaAs晶锭不同部位EL2浓度和位错密度分布。结果表明,掺Si样品中EL2浓度径向分布和位错密度径向分布分别为M形和W形,而未掺杂样品中两者均为W形。讨论了两者间不同对应关系的机理。
|
Distributions of EL2 Concentration and Dislocation Density in Si-doped and Undoped LEC GaAs |
| |
Abstract: | We measure and compare the radial distributions of EL2 concentration and dislocation density in Si-doped and undoped LEC GaAs crystals. The results indicate that the radial distributions of EL2 concentration are W-shaped and M-shaped in undoped and Si-doped specimens, respectively, while the distributions of dislocation density are W-shaped in both undoped and Si-doped specimens. The correlations between the distributions of EL2 concentration and dislocation density in Si-doped and undoped specimens are discussed. |
| |
Keywords: | |
本文献已被 CNKI 等数据库收录! |
|